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| CMPT5179 NPN SILICON RF TRANSISTOR Central DESCRIPTION: TM Semiconductor Corp. SOT-23 CASE MAXIMUM RATINGS (TA=25oC) SYMBOL VCBO VCEO VEBO IC PD TJ,Tstg JA The CENTRAL SEMICONDUCTOR CMPT5179 type is an NPN silicon RF transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for low noise, high frequency amplifier and high output oscillator applications. Marking code is C7H. Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance 20 12 2.5 50 350 -65 to +150 357 UNITS V V V mA mW oC oC/W ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted) SYMBOL ICBO BVCBO BVCEO BVEBO VCE(SAT) VBE(SAT) hFE fT Ccb hfe Gpe NF TEST CONDITIONS MIN VCB=15V IC=10A 20 IC=3.0mA 12 IE=10A 2.5 IC=10mA, IB=1.0mA IC=10mA, IB=1.0mA VCE=1.0V, IC=3.0mA 25 VCE=6.0V, IC=5.0mA, f=100MHz 900 VCB=10V, IE=0, f=0.1 to 1.0MHz VCE=6.0V, IC=2.0, f=1.0kHz 25 VCE=6.0V, IC=5.0mA, f=200MHz 15 VCE=6.0V, IC=1.5mA, RS=50, f=200MHz TYP MAX 20 UNITS nA V V V V V MHz pF dB dB 0.4 1.0 1450 1.0 4.5 182 All dimensions in inches (mm). LEAD CODE: 1) BASE 2) EMITTER 3) COLLECTOR R2 183 |
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